Browsing Departamento de Física | CN by Subject "BANDGAP engineering"
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Band Gap Engineering of ZnO by Alloying of MgO, BeO and TiO2 for UV Sensor Applications
ZnO-based alloys from II-VI semiconductors are considered to be a promising alternative to III-V nitrides for optoelectronic devices in the ultraviolet range as an alternative to the GaN material system. ZnO is a hard ...